AFP3401AS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFP3401AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 30V P-Channel Enhancement Mode MOSFET Features -30V/-2.4 RDS(ON)=58mΩ@VGS=-10.0V -30V/-1.8 RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2 RDS(ON)=80mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2...