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AFP3401AS - P-Channel MOSFET

This page provides the datasheet information for the AFP3401AS, a member of the AFP3401AS-Alfa P-Channel MOSFET family.

Description

AFP3401AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-2.4 RDS(ON)=58mΩ@VGS=-10.0V -30V/-1.8 RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2 RDS(ON)=80mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design.

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Datasheet Details

Part number AFP3401AS
Manufacturer Alfa-MOS
File Size 765.84 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3401AS Datasheet
Additional preview pages of the AFP3401AS datasheet.

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Alfa-MOS Technology General Description AFP3401AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP3401AS 30V P-Channel Enhancement Mode MOSFET Features -30V/-2.4 RDS(ON)=58mΩ@VGS=-10.0V -30V/-1.8 RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2 RDS(ON)=80mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
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