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AFP3427W - 105V P-Channel MOSFET

This page provides the datasheet information for the AFP3427W, a member of the AFP3427W-Alfa 105V P-Channel MOSFET family.

Description

AFP3427W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID= -1.0A,RDS(ON)=600 mΩ @VGS=-10V.
  • ID= -0.5A,RDS(ON)=620 mΩ @VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design.

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Datasheet preview – AFP3427W

Datasheet Details

Part number AFP3427W
Manufacturer Alfa-MOS
File Size 561.25 KB
Description 105V P-Channel MOSFET
Datasheet download datasheet AFP3427W Datasheet
Additional preview pages of the AFP3427W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3427W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3427W 105V P-Channel Enhancement Mode MOSFET Features  ID= -1.0A,RDS(ON)=600 mΩ @VGS=-10V  ID= -0.5A,RDS(ON)=620 mΩ @VGS=-4.
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