AFP3427W
Description
AFP3427W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Key Features
- ID= -1.0A,RDS(ON)=600 mΩ @VGS=-10V
- ID= -0.5A,RDS(ON)=620 mΩ @VGS=-4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design
Applications
- Active Clamp Circuits in DC/DC Power Supplies
