AFP4599W
Description
AFP4599W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Key Features
- ID= 8A,RDS(ON)= 22mΩ@VGS=10V
- ID= 6A,RDS(ON)= 28mΩ@VGS=4.5V P-Channel
- ID= -7.2A,RDS(ON)= 42mΩ@VGS= -10V
- ID= -6.2A,RDS(ON)= 60mΩ@VGS= -4.5V
Applications
- Low Current DC/DC Conversion
