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AFP7113WS Datasheet PDF

Alfa-MOS AFP7113WS

P-Channel MOSFET

Part No. AFP7113WS
Datasheet AFP7113WS Download
Manufacturer
Alfa-MOS
Description P-Channel MOSFET
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AFP7113WS datasheet page 1 preview

GENERAL DESCRIPTION

AFP7113WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( DFN3X3-8L ) AFP7113WS 100V P-Channel Enhancement Mode MOSFET

FEATURES

● -100/-7.0A,RDS(ON)= 87mΩ@VGS= -10V
● -100/-5.0A,RDS(ON)= 95mΩ@VGS= -4.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● DFN3X3-8L package design Application
● DC-DC Converter
● POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D

DESCRIPTION

Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFP7113WSFN338RG 7113WS DFN3X3-8L ※ YY
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