Download the AFP7443WS datasheet PDF.
This datasheet also covers the AFP7443WS-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFP7443WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Key Features
-40V/-12A,RDS(ON)=13mΩ@VGS=-10V.
-40V/-10A,RDS(ON)=17mΩ@VGS=-4.5V.
Super high density cell design for extremely
low RDS (ON).
Exceptional on-resistance and maximum DC
current capability.
Full PDF Text Transcription for AFP7443WS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFP7443WS. For precise diagrams, and layout, please refer to the original PDF.
Alfa-MOS Technology General Description AFP7443WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These...
View more extracted text
Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFP7443WS 40V P-Channel Enhancement Mode MOSFET Features -40V/-12A,RDS(ON)=13mΩ@VGS=-10V -40V/-10A,RDS(ON)=17mΩ@VGS=-4.
AFP7443WS Datasheet
