Datasheet4U Logo Datasheet4U.com

AFP7489S - P-Channel MOSFET

This page provides the datasheet information for the AFP7489S, a member of the AFP7489S-Alfa P-Channel MOSFET family.

Description

AFP7489S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z -100/-7.8A,RDS(ON)= 42mΩ@VGS= -10V z -100/-7.3A,RDS(ON)= 47mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design.

📥 Download Datasheet

Datasheet preview – AFP7489S

Datasheet Details

Part number AFP7489S
Manufacturer Alfa-MOS
File Size 423.50 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP7489S Datasheet
Additional preview pages of the AFP7489S datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology AFP7489S 100V P-Channel Enhancement Mode MOSFET General Description AFP7489S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z -100/-7.8A,RDS(ON)= 42mΩ@VGS= -10V z -100/-7.3A,RDS(ON)= 47mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Load Switch z Adaptor Switch z Notebook PC Pin Define Pin 4 1~3 5~8 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
Published: |