Alfa-MOS AFP8206
P-Channel MOSFET
| Part No. | AFP8206 |
|---|---|
| Datasheet | AFP8206 Download |
| Manufacturer |  Alfa-MOS |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFP8206, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TSOP-6 ) AFP8206 20V P-Channel Enhancement Mode MOSFETFEATURES
-20V/-4.5A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Load Switch Portable Equipment Battery Powered System Pin Define Pin 1 2 3 4 5 6 Symbol S1 D1/D2 S2 G2 D1/D2 G1 Ordering Information Part Ordering No. Part Marking Package AFP8206TS6RG 06YW TSOP-6 ϡʳ 06 parts code ϡʳ Y year code ( 0 ~ 9 )
