The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Equivalent circuit
C
Built-in Avalanche Diode for Surge Absorbing Darlington
2SD2141
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2141 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF
13.0min
B
(1.5k Ω)(100 Ω) E
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2141 380±50 380±50 6 6(Pulse10) 1 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
mA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.
D2141 Datasheet
