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ACS750LCA-050 - Hall Effect-Based Linear Current Sensor

Download the ACS750LCA-050 datasheet PDF. This datasheet also covers the ACS750xCA-50 variant, as both devices belong to the same hall effect-based linear current sensor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • r in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ACS750xCA-50-Allegro.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
ACS750LCA-050 Current Sensor Allegro MicroSystems
ACS750ECA-100 Hall Effect-Based Linear Current Sensor Allegro MicroSystems
ACS750SCA-050 Current Sensor Allegro MicroSystems
ACS750SCA-100 Hall Effect-Based Linear Current Sensor Allegro MicroSystems
ACS752SCA-050 Current Sensor Allegro MicroSystems

Other Datasheets by Allegro MicroSystems

Part Number Description
ACS750LCA-075 Hall Effect-Based Linear Current Sensor
ACS750SCA-075 Hall Effect-Based Linear Current Sensor
ACS754LCB-100 Hall Effect-Based Linear Current Sensor
ACS754LCB-100-PFF Hall Effect-Based Linear Current Sensor
ACS755SCB-200 Hall Effect-Based Linear Current Sensor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFI7536GPbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G S VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.7m: 3.4m: 86A D G D S TO-220 Full-Pak G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Max.