D2082 Datasheet PDF

Darlington 2SD2082 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2082 10max 10max 120min 2000min 1.5max 2.5max 20typ 210typ V V 16.2 Equivalent circuit B C (2k Ω) (100 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2082 120 120 6 16(Pulse26) 1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Driver for Solenoid, Motor and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA 23.0±0.3 V 9.5±0.2 mA a b MHz pF 1.75 2.15 1.05 5.45±0.1 1.5 4.4 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 5 IC (A) 8 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 16 IB2 (mA) –16 ton (µs) 0.6typ tstg (µs) 7.0typ tf (µs) 1.5typ 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 2.0g a.