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AS7C331MFT36A - (AS7C331MFT32A / AS7C331MFT36A) 3.3V 1M x 32/36 Flow-through synchronous SRAM

This page provides the datasheet information for the AS7C331MFT36A, a member of the AS7C331MFT32A (AS7C331MFT32A / AS7C331MFT36A) 3.3V 1M x 32/36 Flow-through synchronous SRAM family.

Description

The AS7C331MFT32A/36A is a high-performance CMOS 32-Mbit synchronous Static Random Access Memory (SRAM) device organized as 1,048,576 words × 32 or 36 bits.

Fast cycle times of 8.5/10/12 ns with clock access times (tCD) of 7.5/8.5/10 ns.

Three chip enable (CE) inputs permit easy memory expansion.

Features

  • Organization: 1,048,576 words × 32 or 36 bits Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available in 100-pin TQFP package Individual byte write and global write.
  • Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separa.

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Datasheet preview – AS7C331MFT36A

Datasheet Details

Part number AS7C331MFT36A
Manufacturer Alliance Semiconductor Corporation
File Size 568.20 KB
Description (AS7C331MFT32A / AS7C331MFT36A) 3.3V 1M x 32/36 Flow-through synchronous SRAM
Datasheet download datasheet AS7C331MFT36A Datasheet
Additional preview pages of the AS7C331MFT36A datasheet.

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December 2004 ® AS7C331MFT32A AS7C331MFT36A 3.3V 1M × 32/36 Flow-through synchronous SRAM Features • • • • • • • Organization: 1,048,576 words × 32 or 36 bits Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available in 100-pin TQFP package Individual byte write and global write • • • • • • Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ Linear or interleaved burst control Snooze mode for reduced power-standby Common data inputs and data outputs www.DataSheet4U.
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