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AS1C4M16PL-70BIN - 64M CellularRAM AD-MUX Low Power PSEUDO SRAM

Description

64M CellularRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 64Mb CellularRAM device has a DRAM core organized as 4 Meg x 16 bits.

Features

  • - 16-bit multiplexed address/data bus - Single device supports asynchronous and burst operation - Vcc, VccQ voltages: 1.7V-1.95V VCC 1.7V-1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 108 MHz (tCLK = 9.26ns) , 133MHz(tCLK = 7.5ns) Burst initial latency: 37.0ns (4 clocks) @ 108 MHz , 37.5ns (5 clocks) @ 133 MHz tACLK: 7ns @ 108 MHz , 5.5ns @ 133 MHz - Low power consumption: Asynchronous.

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Datasheet Details

Part number AS1C4M16PL-70BIN
Manufacturer Alliance Semiconductor
File Size 1.63 MB
Description 64M CellularRAM AD-MUX Low Power PSEUDO SRAM
Datasheet download datasheet AS1C4M16PL-70BIN Datasheet
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    Full PDF Text Transcription

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    AS1C4M16PL-70BIN Revision History 64M (4M x 16 bit) CellularRAM AD-MUX Low Power PSEUDO SRAM 49ball FBGA Package Revision Details Rev 1.0 Preliminary datasheet Date Aug 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 52 - Rev.1.0 Aug. 2018 AS1C4M16PL-70BIN x16 Burst, Multiplexed Address/Data FEATURES - 16-bit multiplexed address/data bus - Single device supports asynchronous and burst operation - Vcc, VccQ voltages: 1.7V-1.95V VCC 1.7V-1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 108 MHz (tCLK = 9.
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