AS1C4M16PL-70BIN Description
64M CellularRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb CellularRAM device has a DRAM core organized as 4 Meg x 16 bits. These devices are a variation of the industry-standard Flash control interface, with a multiplexed address/data bus.
AS1C4M16PL-70BIN Key Features
- 16-bit multiplexed address/data bus
- Single device supports asynchronous and burst operation
- Vcc, VccQ voltages
- Random access time: 70ns
- Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 10
- Low-power features
- Configuration: 64Mb (4 megabit x 16)
- Vcc core / VccQ I/O voltage supply: 1.8V
- Timing: 70ns access
- Frequency: 48MHz,83 MHz, 108 MHz, 133 MHz