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AS29F040 Datasheet 5v 512k X 8 CMOS Flash Eeprom

Manufacturer: Alliance Semiconductor

Overview: 3UHOLPLQDU#LQIRUPDWLRQ ® $65<)373 89#845.ð;#&026#)ODVK#((3520 )HDWXUHV • Organization:512K words × 8 bits • Industrial and mercial temperature • Sector architecture - Eight 64K byte sectors - Erase.

Key Features

  • single 5.0V power supply operation for read, write, and erase functions. Internally generated and regulate voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. DATA polling of DQ7 or toggle bit (DQ6) may be used to detect end-of-program or erase operations. The device automatically resets to read mode after program and/or erase operations are completed. The AS29F040 resists accidental erasure or spurious.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Austin Semiconductor Logo AS29F040 512K x 8 FLASH Austin Semiconductor
Micross Logo AS29F040 512K x 8 FLASH Micross

More Datasheets from Alliance Semiconductor

Part Number Description
AS29F010 5V 128K x 8 CMOS FLASH EEPROM
AS29F200 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29LV160 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM
AS29LV400 3V 512K x 8 / 256K x 16 CMOS Flash EEPROM
AS29LV800 3V 1M x 8/512K x 16 CMOS Flash EEPROM

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