Alliance Semiconductor AS4C16M16SA
The 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on theFEATURES
● Fast access time from clock: 5/5.4 ns● Fast clock rate: 166/143 MHz
● Fully synchronous operation
● Internal pipelined architecture
● 4M word x 16-bit x 4-bank
● Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function
● Operating temperature range - Commercial (0 ~ 70°C) - Industrial (-40 ~ 85°C)
● Auto Refresh and Self Refresh
● 8192 refresh cycles/64ms
● CKE power down mode
● Single +3.3V ±0.3V power supply
● Interface: LVTTL
● 54-pin 400 mil plastic TSOP II package
● 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package - All parts ROHS are compliant Overview