Alliance Semiconductor AS4C16M32SC-7TIN
This chapter gives an overview of the 512-Mbit Synchronous DRAM component product and describes its main characteristics.| Part No. | AS4C16M32SC-7TIN |
|---|---|
| Datasheet | AS4C16M32SC-7TIN Download |
| Manufacturer |  Alliance Semiconductor |
| Description | 512M SDRAM |
| Buy | Stock & Price |
FEATURES
● Fully Synchronous to Positive Clock Edge● Fast clock rate: 133 MHz
● Multiple Burst Read with Single Write Operation
● Four Banks controlled by BA0 & BA1
● Data Mask for Byte Control (x16,x32)
● Programmable Mode registers - CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved
● Automatic and Controlled Precharge Command
● Auto
