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AS4C256K16E0 Datasheet 5v 256k X 16 CMOS Dram

Manufacturer: Alliance Semiconductor

Overview: AS4C256K16E0 ® 5V 256K×16 CMOS DRAM (EDO).

General Description

40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A8 A7 A6 A5 A4 GND AS4C256K16E0 AS4C256K16E0 VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 1 2 3 4 5 6 7 8 9 10 44 43 42 41 40 39 38 37 36 35 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 A0 to A8 Address inputs Row address strobe Output enable I/O0 to I/O15 OE UCAS LCAS WE Input/output Column address strobe, upper byte Column address strobe, lower byte Read/write control Power (5V ± 0.5V) NC NC WE RAS NC A0 A1 A2 A3 VCC 13 14 15 16 17 18 19 20 21 22 32 31 30 29 28 27 26 25 24 23 NC LCAS UCAS OE A8 A7 A6 A5 A4 GND VCC GND Ground Symbol tRAC tCAA tCAC AS4C256K16E

Key Features

  • Organization: 262,144 words × 16 bits.
  • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time.
  • Low power consumption - Active: 500 mW max (AS4C256K16E0-25) - Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25).
  • EDO page mode.
  • Refresh - 512 refresh cycles, 8 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh - Self-refresh option is available for new generation device only. C.

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