AS4C32M16D1A-C - 32M x 16 bit DDR Synchronous DRAM

Alliance Semiconductor

Key Features

Fast clock rate: 200MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 8M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte write mask control.
DM Write Latency = 0.
Auto Refresh and Self Refresh.
8192.

AS4C32M16D1A-C 32m x 16 bit ddr synchronous dram by Alliance Semiconductor - Datasheet Preview

Datasheet Details

Part number	AS4C32M16D1A-C
Manufacturer	Alliance Semiconductor
File Size	1.45 MB
Description	32M x 16 bit DDR Synchronous DRAM
Datasheet	AS4C32M16D1A-C Datasheet

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Full PDF Text Transcription (Reference)

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Revision History Revision Details Rev 1.0 Preliminary datasheet AS4C32M16D1A-C&I Date March 2015 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 0 Rev. 1.0 Mar. /2015 AS4C32M16D1A-C&I 32M x 16 bit DDR Synchronous DRAM (SDRAM) Advanced (Rev. 1.0, Mar. /2015) Features  Fast clock rate: 200MHz  Differential Clock CK & CK  Bi-directional DQS  DLL enable/disable by EMRS  Fully synchronous operation  Internal pipeline architecture  Four internal banks, 8M x 16-bit for each bank  Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.