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AS4C32M16SB-6TIN - CMOS synchronous 512Mb SDRAM

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Alliance Semiconductor

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AS4C32M16SB-6TIN CMOS synchronous 512Mb SDRAM by Alliance Semiconductor - Datasheet Preview — Datasheet preview – AS4C32M16SB-6TIN

Datasheet Details

Part number	AS4C32M16SB-6TIN
Manufacturer	Alliance Semiconductor
File Size	1.32 MB
Description	CMOS synchronous 512Mb SDRAM
Datasheet	AS4C32M16SB-6TIN Datasheet
Additional preview pages of the AS4C32M16SB-6TIN datasheet.

Product details

Features

Fast access time from clock: 5/5.4 ns.
Fast clock rate: 166/143 MHz.
Fully synchronous operation.
Internal pipelined architecture.
8M word x 16-bit x 4-bank.
Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function.
Auto Refresh and Self Refresh.
8192 refresh cycles/64ms.
CKE power down mode.
Single +3.3V ±0.3V.

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Published: May 6, 2017 |