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AS4C32M16SB-6TIN - CMOS synchronous 512Mb SDRAM

Key Features

  • Fast access time from clock: 5/5.4 ns.
  • Fast clock rate: 166/143 MHz.
  • Fully synchronous operation.
  • Internal pipelined architecture.
  • 8M word x 16-bit x 4-bank.
  • Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function.
  • Auto Refresh and Self Refresh.
  • 8192 refresh cycles/64ms.
  • CKE power down mode.
  • Single +3.3V ±0.3V.

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Datasheet Details

Part number AS4C32M16SB-6TIN
Manufacturer Alliance Semiconductor
File Size 1.32 MB
Description CMOS synchronous 512Mb SDRAM
Datasheet download datasheet AS4C32M16SB-6TIN Datasheet

Full PDF Text Transcription for AS4C32M16SB-6TIN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AS4C32M16SB-6TIN. For precise diagrams, and layout, please refer to the original PDF.

AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Revision History AS4C32M16SB-7TCN/AS4C32M16SB-7TIN/AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE Revision Details Rev 1.0 Prel...

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N/AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date Jun 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/55 - Rev.1.0 June 2016 AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Features • Fast access time from clock: 5/5.

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