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AS6C1616A - 1024K X 16 BIT LOW POWER CMOS SRAM

General Description

TheAS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology.

The device supports industrial temperature range and Chip Scale Package for user flexibility of system design.

Key Features

  • Process Technology : 0.15μm Full CMOS Organization : 1M x 16 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min. ) Three state output and TTL Compatible Package Type : 48-FPBGA AS6C1616A.

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Datasheet Details

Part number AS6C1616A
Manufacturer Alliance Semiconductor
File Size 1.01 MB
Description 1024K X 16 BIT LOW POWER CMOS SRAM
Datasheet download datasheet AS6C1616A Datasheet

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Other Datasheets by Alliance Semiconductor

Part Number Description
AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM
AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM
AS6C1008L 128k x 8 BIT SUPER LOW POWER CMOS SRAM
AS6C1016 64K X 16 BIT LOW POWER CMOS SRAM
AS6C2008 256K x 8 BIT LOW POWER CMOS SRAM

Full PDF Text Transcription (Reference)

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AUGUST 2010 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES • • • • • • Process Technology : 0.15μm Full CMOS Organization : 1M x 16 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA AS6C1616A GENERAL DESCRIPTION TheAS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology. The device supports industrial temperature range and Chip Scale Package for user flexibility of system design. The device also supports low data retention voltage for battery backup operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Industrial (-40 ~ 85oC) Vcc Range Speed Standby (ISB1, Typ.) 4 μA1) Operating (ICC1.Max.