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AS6C4016 - 256K X 16 BIT SUPER LOW POWER CMOS SRAM

Description

The is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Features

  • Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP. ) Standby current : 4 A (TYP. ) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage :1.5V(MIN. ) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA.

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Datasheet Details

Part number AS6C4016
Manufacturer Alliance Semiconductor
File Size 607.98 KB
Description 256K X 16 BIT SUPER LOW POWER CMOS SRAM
Datasheet download datasheet AS6C4016 Datasheet

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Other Datasheets by Alliance Semiconductor

Part Number Description
AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM
AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM
AS6C1008L 128k x 8 BIT SUPER LOW POWER CMOS SRAM
AS6C1016 64K X 16 BIT LOW POWER CMOS SRAM
AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM

Full PDF Text Transcription

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MARCH January 2008 2007 AS6C4016 X 8 BITCMOS LOW SRAM POWER CMOS SRAM 256K X 16 BIT SUPER 512K LOW POWER FEATURES Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 4 A (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage :1.5V(MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology.
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