Alliance Semiconductor AS6UA51216
The AS6UA51216 is a low-power CMOS 8,388,608-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. When CS is high, or UB and LB are high, the device enters standby mode: the AS6UA51216 is guaranteed not to exceed 72 µW power consumption at 3.6V and 55ns; 41 µW at 2.7V and 70 ns; or 28 µW at 2.3V and 100 ns.| Part No. | AS6UA51216 |
|---|---|
| Datasheet | AS6UA51216 Download |
| Manufacturer |  Alliance Semiconductor |
| Description | low power CMOS SRAM |
| Buy | Stock & Price |
FEATURES
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● AS6UA51216 Intelliwatt™ active power circuitry Industrial and commercial temperature ranges available Organization: 524,288 words × 16 bits 2.7V to 3.6V at 55 ns 2.3V to 2.7V at 70 ns 1.65V to 2.3V at 100 ns Low power consumption: ACTIVE - 144 mW at 3.6V and 55 ns - 68 mW at 2.7V and 70 ns - 28 mW at 2.3 V and 100 ns
● Low power consumption: STANDBY - 72 µW max at 3.6V - 41 µW max at 2.7V - 28 µW max at 2.3V
● 1.2V data retention
● Equal access and cycle times
● Easy memory expansion with CS, OE inputs
● Smallest footprint packages - 48-ball FBGA - 400-mil 44-pin TSOP II
● ESD protection ≥ 2000 volts
● Latch-up current ≥ 200 mA Logic block diagram A0 A1 A2 A3 A4 A6 A7 A8 A12 A13 I/O1–I/O8 I/O9–I/O16 WE Row Decoder VDD 512K × 16 Array (8,388,608) VSS Pin arrangement (top view) 44-pin 400-mil TSOP II A4 1 A5 44 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE 5 A0 UB 40 LB 6 39 CS I/O16 I/O1 7 38 I/O15 I/O2 8 37 I/O14 I/O3 9 36 I/O13 I/O4 10 35 VCC VSS 11 34 VSS VCC 12 33 I/O5 1...
