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AS6VA25616 - low-power CMOS SRAM

Description

The AS6VA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits.

It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

Features

  • AS6VA25616.
  • Intelliwatt™ active power circuitry.
  • Industrial and commercial temperature ranges available.
  • Organization: 262,144 words × 16 bits.
  • 2.7V to 3.3V at 55 ns.
  • Low power consumption: ACTIVE - 132 mW at 3.3V and 55 ns.
  • 1.2V data retention.
  • Equal access and cycle times.
  • Easy memory expansion with CS, OE inputs.
  • Smallest footprint packages.
  • ESD protection ≥ 2000 volts.
  • Latch-up curre.

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Datasheet preview – AS6VA25616

Datasheet Details

Part number AS6VA25616
Manufacturer Alliance Semiconductor
File Size 201.56 KB
Description low-power CMOS SRAM
Datasheet download datasheet AS6VA25616 Datasheet
Additional preview pages of the AS6VA25616 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com October 2000 ® AS6VA25616 2.7V to 3.3V 256K × 16 Intelliwatt™ low-power CMOS SRAM with one chip enable Features • AS6VA25616 • Intelliwatt™ active power circuitry • Industrial and commercial temperature ranges available • Organization: 262,144 words × 16 bits • 2.7V to 3.3V at 55 ns • Low power consumption: ACTIVE - 132 mW at 3.3V and 55 ns • 1.2V data retention • Equal access and cycle times • Easy memory expansion with CS, OE inputs • Smallest footprint packages • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA - 48-ball FBGA - 400-mil 44-pin TSOP II • Low power consumption: STANDBY - 66 µW max at 3.
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