Datasheet4U Logo Datasheet4U.com

AS7C164 - 5V 8K X 8 CMOS SRAM

Key Features

  • e Low and CE2 is High for read cycle. Address valid prior to or coincident with CE1 transition Low and CE2 transition High. All read cycle timings are referenced from the last valid address to the first transitioning address. CE1 or WE must be High or CE2 Low during address transitions. Either CE or WE asserting high terminates a write cycle. All write cycle timings are referenced from the last valid address to the first transitioning address. CE1 and CE2 have identical timing. 2V data retention.

📥 Download Datasheet

Datasheet Details

Part number AS7C164
Manufacturer Alliance Semiconductor
File Size 187.10 KB
Description 5V 8K X 8 CMOS SRAM
Datasheet download datasheet AS7C164 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2&72%(5#4<<< ® $6:&497 89#;.[;#&026#65$0 )HDWXUHV • AS7C164 (5V version) • Commercial temperatur • Organization: 8,192 words × 8 bits • Center power and ground pins • High speed - 12/15/20 ns address access time - 3/4/5 ns output enable access time • Low power consumption: ACTIVE - 550 mW (AS7C164) / max @ 12 ns • Low power consumption: STANDBY - 11 mW (AS7C164) / max CMOS I/O • 2.