AS7C164 - 5V 8K X 8 CMOS SRAM

Product Overview

Alliance Semiconductor

Part number	AS7C164
Manufacturer	Alliance Semiconductor
File Size	187.10 KB
Description	5V 8K X 8 CMOS SRAM
Datasheet	AS7C164 Datasheet
Additional preview pages of the AS7C164 datasheet.

e Low and CE2 is High for read cycle. Address valid prior to or coincident with CE1 transition Low and CE2 transition High. All read cycle timings are referenced from the last valid address to the first transitioning address. CE1 or WE must be High or CE2 Low during address transitions. Either CE or WE asserting high terminates a write cycle. All write cycle timings are referenced from the last valid address to the first transitioning address. CE1 and CE2 have identical timing. 2V data retention.

📁 Similar Datasheet

AS7C1024B - 5V 1Mb FAST Asynchronous SRAM (Alliance Semiconductor Corporation)
AS7C1025A - 5V/3.3V 128K x 8 CMOS SRAM (Alliance Semiconductor Corporation)
AS7C1025B - 5V 128K x 8 CMOS SRAM (Alliance Semiconductor Corporation)
AS7C1026A - 5V/3.3V 64K X 16 CMOS SRAM (Alliance Semiconductor Corporation)
AS7C251MFT18A - 2.5V 1M x 18 flowthrough burst synchronous SRAM (Alliance Semiconductor Corporation)
AS7C251MFT32A - (AS7C251MFT32A / AS7C251MFT36A) 2.5V 1M x 32/36 Flow-through synchronous SRAM (Alliance Semiconductor Corporation)
AS7C251MFT36A - (AS7C251MFT32A / AS7C251MFT36A) 2.5V 1M x 32/36 Flow-through synchronous SRAM (Alliance Semiconductor Corporation)
AS7C251MNTD18A - 2.5V 1M x 18 Pipelined SRAM (Alliance Semiconductor Corporation)

Other Datasheets by Alliance Semiconductor

Published: Oct 29, 2005 |