Alliance Semiconductor AS9F31G08SA-25BIN
the AS9F NAND Series extended reliability of 100 K program/ erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm. The copy back function allows the optimization of defective blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section without the time-consuming serial data insertion phase. This device includes also extra features like OTP/Unique ID area, Read ID2 extension.| Part No. | AS9F31G08SA-25BIN |
|---|---|
| Datasheet | AS9F31G08SA-25BIN Download |
| Manufacturer |  Alliance Semiconductor |
| Description | SLC Parallel NAND FLASH |
| Buy | Stock & Price |
FEATURES
● HIGH DENSITY NAND FLASH MEMORIES Cost effective solutions for mass storage applications● DENSITY 1Gbit / 2Gbit / 4Gbit / 8Gbit
● NAND INTERFACE x8 bus width. Pinout compatibility for all densities
● SUPPLY VOLTAGE 3.3V Device : Vcc = 2.7V ~ 3.6V 1.8V Device : Vcc= 1.7V ~ 1.95V
● PAGE SIZE 1Gb:(2K+64 spare) bytes 2Gb:(2K+128 spare) bytes 4Gb & 8Gb:(2K+128 spare) bytes
● BLOCK SIZE 1Gb : (128 K + 4 K spare) bytes 2Gb : (128 K + 8 K spare) bytes 4Gb & 8Gb : (128 K + 8 K spare) bytes
● PLANE SIZE 1Gb : 1024 Blocks per Plane 2Gb : 1024 Blocks per Plane 4Gb & 8Gb : 2048 Blocks per Plane
● DEVICE SIZE 1Gb : 1 plane per device or 128M bytes 2Gb : 2 plane per device or 256M bytes 4Gb : 2 plane per device or 512M bytes 8Gb : Dual 4Gb Dies per Package, 1024M bytes
● FAST BLOCK ERASE 1Gb : Block erase time: 3 ms (Typ) 2Gb : Block erase time: 3.5 ms (Typ) 4Gb / 8Gb : Block erase time: 3.5 ms (Typ)
● COPY BACK PROGRAM - Fast Data Copy without external buffering
● CACHE READ - Internal bu...
