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AWL3A1632-12D2LK35CS - Mobile LPDDR3 SDRAM

General Description

The pin description table below is a comprehensive list of signals for the device family.

All signals listed may not be supported on this device.

See Bond Pad tables for information specific to this device.

Key Features

  • Features.
  • Density: 16Gb.
  • Data rate: 800Mhz(1600Mbps).
  • 8n prefetch DDR architecture.
  • Array configuration.
  • 512 Meg x 32 (DDP).
  • Interface: HSUL_12.
  • Burst lengths(BL):8.
  • Burst type(BT).
  • Read latency(RL):3,6,8,9,10,11,12 Key Options.
  • Power supply: VDD1 =1.8V VDD2 =1.2V VDDCA=1.2V VDDQ =1.2V.
  • Array configuration.
  • 512 Meg x 32 (DDP).
  • Packaging.
  • 11mm x 11.5mm x 0.85mm, 178-ball.

📥 Download Datasheet

Datasheet Details

Part number AWL3A1632-12D2LK35CS
Manufacturer Allwinner
File Size 4.47 MB
Description Mobile LPDDR3 SDRAM
Datasheet download datasheet AWL3A1632-12D2LK35CS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Mobile LPDDR3 SDRAM AWL3A1632-12D2LK35CS 178-Ball Mobile LPDDR3 SDRAM Features Features • Density: 16Gb • Data rate: 800Mhz(1600Mbps) • 8n prefetch DDR architecture • Array configuration – 512 Meg x 32 (DDP) • Interface: HSUL_12 • Burst lengths(BL):8 • Burst type(BT) • Read latency(RL):3,6,8,9,10,11,12 Key Options • Power supply: VDD1 =1.8V VDD2 =1.2V VDDCA=1.2V VDDQ =1.2V • Array configuration – 512 Meg x 32 (DDP) • Packaging – 11mm x 11.5mm x 0.85mm, 178-ball FBGA • Operating temperature range – From 0°C to +75°C LPDDR3_178Ball Datasheet(Version0.1) 1 Confidential AWL3A1632 Part Numbering Information Low Power memory devices are available in different configurations and densities. Table 1: Ordering Information Base Part Number Capacity Organization Die Num.