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AO4800
30V Dual N-Channel MOSFET
General Description
The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V)
100% UIS Tested 100% Rg Tested
30V 6.9A < 27mW < 32mW < 50mW
Top View
SOIC-8 Bottom View
Top View
S2 1
G2 2 S1 3 G1 4
8 D2 7 D2 6 D1 5 D1 G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.