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AO4813
30V Dual P-Channel MOSFET
General Description
Product Summary
The AO4813 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V)
100% UIS Tested 100% Rg Tested
-30V -7.1A < 25mW < 40mW
SOIC-8
Top View
Bottom View
D
Pin1
Top View
S2 1
8 D2
G2 2
7 D2
S1 3
6 D1
G1 4
5 D1
G
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.