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AO4813 - 30V Dual P-Channel MOSFET

General Description

The AO4813 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

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AO4813 30V Dual P-Channel MOSFET General Description Product Summary The AO4813 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -7.1A < 25mW < 40mW SOIC-8 Top View Bottom View D Pin1 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.