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AO4818B - 30V Dual N-channel MOSFET

General Description

The AO4818B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4818B 30V Dual N-channel MOSFET General Description The AO4818B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 8A <19mW < 26mW SOIC-8 Top View Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 6 D2 D1 G 5 D1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.