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AO6400 - 30V N-Channel MOSFET

General Description

The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

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Other Datasheets by Alpha & Omega Semiconductors

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AO6400 30V N-Channel MOSFET General Description Product Summary The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 6.9A < 28mW < 33mW < 52mW TSOP6 Top View Bottom View Top View D Pin1 D1 D2 G3 6 D 5 D 4 S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 6.9 5.