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AO6402 - 30V N-Channel MOSFET

General Description

The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device may be used as a load switch or in PWM applications.

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📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO6402A 30V N-Channel MOSFET
AO6402L N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO6402 30V N-Channel MOSFET General Description Product Summary The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 5A < 31mΩ < 43mΩ TSOP6 Top View Bottom View Top View D D D D G S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 5 4 20 1.25 0.