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AO6402A - 30V N-Channel MOSFET

General Description

The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

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AO6402A 30V N-Channel MOSFET General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Product Summary VDS (V) = 30V ID = 7.5A RDS(ON) < 24mW RDS(ON) < 35mW (VGS = 10V) (VGS = 10V) (VGS = 4.