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AO6402L - N-Channel MOSFET

This page provides the datasheet information for the AO6402L, a member of the AO6402 N-Channel MOSFET family.

Datasheet Summary

Description

The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device may be used as a load switch or in PWM applications.

AO6402L ( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 6.9A RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V) TSOP-6 Top View www. DataSheet4U. com D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 6.9 5.8 20 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range.

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Datasheet preview – AO6402L

Datasheet Details

Part number AO6402L
Manufacturer Alpha & Omega Semiconductors
File Size 278.47 KB
Description N-Channel MOSFET
Datasheet download datasheet AO6402L Datasheet
Additional preview pages of the AO6402L datasheet.

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Full PDF Text Transcription

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Rev 3:Nov 2004 AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 6.9A RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V) TSOP-6 Top View www.DataSheet4U.com D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 6.9 5.8 20 2 1.
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