AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Part number	AO8803
Manufacturer	Alpha & Omega Semiconductors
File Size	147.73 KB
Description	Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8803 Datasheet
Additional preview pages of the AO8803 datasheet.

The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -12 ±8 -7 -5.8 -20 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°.

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Other Datasheets by Alpha & Omega Semiconductors

Published: Aug 29, 2009 |