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AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -12 ±8 -7 -5.8 -20 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°.

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Datasheet Details

Part number AO8803
Manufacturer Alpha & Omega Semiconductors
File Size 147.73 KB
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO8803 Datasheet
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www.DataSheet4U.com AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specifications). AO8803L is a Green Product ordering option. AO8803 and AO8803L are electrically identical. Features VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.
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