Datasheet4U Logo Datasheet4U.com

AOB095A60L - N-Channel Power Transistor

Datasheet Summary

Description

Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications SMPS with

📥 Download Datasheet

Datasheet preview – AOB095A60L

Datasheet Details

Part number AOB095A60L
Manufacturer Alpha & Omega Semiconductors
File Size 427.62 KB
Description N-Channel Power Transistor
Datasheet download datasheet AOB095A60L Datasheet
Additional preview pages of the AOB095A60L datasheet.

📁 Similar Datasheet

  • AOB10N60 - N-Channel MOSFET (INCHANGE)
  • AOB1100L - N-Channel MOSFET (INCHANGE)
  • AOB1100L - 100V N-Channel Rugged Planar MOSFET (Freescale)
  • AOB11N60 - N-Channel MOSFET (INCHANGE)
  • AOB11S60 - N-Channel MOSFET (INCHANGE)
  • AOB11S65 - Power Transistor (Freescale)
  • AOB11S65 - N-Channel MOSFET (INCHANGE)
  • AOB12N50 - 12A N-Channel MOSFET (Freescale)
  • AOB12N50 - N-Channel MOSFET (INCHANGE)
  • AOB12N60FD - N-Channel MOSFET (INCHANGE)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOTF095A60L/AOT095A60L/AOB095A60L 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F TO-263 D2PAK D 700V 152A < 0.095Ω 78nC 7.
Published: |