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AOB160A60L Datasheet N-Channel Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AOTF160A60L/AOT160A60L/AOB160A60L 600V, a MOS5 TM N-Channel Power Transistor.

General Description

• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F TO-263 D2PAK D 700V 96A < 0.16Ω 46nC 4.9mJ D AOT160A60L S GD Orderable Part Number AOTF160A60L AOT160A60L AOB160A60L S GD AOTF160A60L Package Type TO-220F Green TO-220 Green TO-263 Green S G AOB160A60L Form Tube Tube Tape &Reel G S Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)160A60L AOTF160A60L Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 24 24* 15 15* 96 6 18 172 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 250 34.7 2.0 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.

AOT(B)160A60L 65 0.5 0.5 AOTF160A60L 65 -3.6 Units °C/W °C/W °C/W Rev 2.1: April 2024 www.aosmd.com Page 1 of 6 AOTF160A60L/AOT160A60L/AOB160A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Dra