AOD210
Description
The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 70A < 3mΩ < 4mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK Top View D D G Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1m H Power Dissipation
Maximum 30 ±20 70 55 390 23 18 68 231 150 75 2.7 1.7 -55 to 175
Units V V A
TC=25°C TC=100°C TA=25°C TA=70°C
ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
A A m J W W °C
TC=25°C TC=100°C TA=25°C Power...
