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AOD210 - N-Channel MOSFET

General Description

The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD210 30V N-Channel MOSFET General Description The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 70A < 3mΩ < 4mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D G Bottom View D S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.