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AOD210V60E - 600V N-Channel Power Transistor

General Description

Excellent RDS(ON) A Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery RoHS 2.0 and Halogen-Free Compliant Applications SMPS Hard-switching PFC,Resonant PFC/LLC/ZVS FB topologies

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AOD210V60E 600V, a MOSE TM N-Channel Power Transistor General Description • Excellent RDS(ON)*A • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free Compliant Applications • SMPS Hard-switching PFC,Resonant PFC/LLC/ZVS FB topologies • Telecom,Server,ATX and Solar Inverter,Motor Drive Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 45A < 0.21Ω 22nC 4.