Datasheet Details
| Part number | AOD2144 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.38 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOD2144-AlphaOmegaSemiconductors.pdf |
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Overview: AOD2144 40V N-Channel MOSFET General.
| Part number | AOD2144 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.38 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOD2144-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Opitimized Ruggedness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 120A < 2.3mΩ < 4mΩ Applications • DC Motor Driver • Synchronous Rectification in DC/DC and AC/DC Converters TopView TO252 DPAK Bottom View 100% UIS Tested 100% Rg Tested D D D G Orderable Part Number AOD2144 S DG S Package Type TO-252 G S Form Tape & Reel Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=25°C ID TC=100°C Pulsed Drain Current 10uS IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 120 G 200 I 120 G 772 40 32 47 331 156 62 6.2 4.0 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 15 Maximum Junction-to-Ambient A D Steady-State RqJA 40 Maximum Junction-to-Case Steady-State RqJC 0.6 Max 20 50 0.8 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.2: July 2024 www.aosmd.com Page 1 of 6 AOD2144 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD2144 | N-Channel MOSFET | INCHANGE |
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