Datasheet4U Logo Datasheet4U.com

AOD400 - N-Channel MOSFET

General Description

The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 mΩ (VGS = 10V) RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) < 52 mΩ (VGS = 2.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 ±12 10 10 40 15 30 20 10 2.1 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PD.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOD400 N-channel 30V MOSFET VBsemi
AOD403 P-Channel MOSFET VBsemi
AOD403 P-Channel MOSFET INCHANGE
AOD405 P-Channel MOSFET Freescale
AOD405 P-Channel 30V MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOD402 N-Channel MOSFET
AOD403 30V P-Channel MOSFET
AOD404 N-Channel MOSFET
AOD405 P-Channel MOSFET
AOD406 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AOD400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications). AOD400L is a Green Product ordering option. AOD400 and AOD400L are electrically identical. Features VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 mΩ (VGS = 10V) RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) < 52 mΩ (VGS = 2.