AOD407 Datasheet Text
AOD407
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
-RoHS pliant -Halogen Free-
Features
VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mW (VGS = -10V) RDS(ON) < 150mW (VGS = -4.5V)
100% UIS tested 100% RG tested
TopView
TO252
DPAK
Bottom View
DS G
D
DG S
D
G...
