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AOD407 Datasheet P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOD407 P-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

-RoHS Compliant -Halogen Free*

Key Features

  • es VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mW (VGS = -10V) RDS(ON) < 150mW (VGS = -4.5V) 100% UIS tested 100% RG tested TopView TO252 DPAK Bottom View DS G D DG S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C P.

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