Datasheet Details
| Part number | AOD522P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 304.66 KB |
| Description | 30V N-Channel AlphaMOS |
| Download |
AOD522P Download (PDF)
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| Part number | AOD522P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 304.66 KB |
| Description | 30V N-Channel AlphaMOS |
| Download |
AOD522P Download (PDF)
|
|
|
|
• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < 5.2mΩ < 9.5mΩ TO252 DPAK D TopView Bottom View D DS G DG S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±20 46 36 160 17 13 25 31 36 53 26 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 2.2 Max 20 50 2.8 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.3.0: February 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS，ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G 30 V TJ=55°C 1 µA 5 100 nA 1.6 2 2.4 V 3.2 4.3 5.2 mΩ TJ=125°C 6.2 7.5 5 7.3 9
AOD522P 30V N-Channel AlphaMOS General.
| Part Number | Description |
|---|---|
| AOD526 | 30V N-Channel MOSFET |
| AOD528 | 30V N-Channel MOSFET |
| AOD502 | 25V N-Channel MOSFET |
| AOD504 | 25V N-Channel MOSFET |
| AOD508 | 30V N-Channel MOSFET |
| AOD510 | 30V N-Channel MOSFET |
| AOD514 | 30V N-Channel MOSFET |
| AOD516 | 30V N-Channel MOSFET |
| AOD518 | 30V N-Channel MOSFET |
| AOD536 | 30V N-Channel AlphaMOS |