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AOH011V12AM2 1200V αSiC Silicon Carbide Half-Bridge Module
Features
• Proprietary αSiC MOSFET technology • 1200 V/11mΩ Half-Bridge topology • High-frequency & high-efficiency performance • Integrated thermistor & press-fit pin features
Applications
• Solar inverters • EV charging stations • Industrial motor drives • Energy storage
Pin Configuration
Product Summary
VDS @ TJ, max IDM RDS(ON), TYP Qrr EOSS @ 800V
1200V 200A 11mΩ 256nC 175µJ
DC+
AC G1 S1
T1
DC-
N T
C
G2 S2
T2
Ordering Part Number AOH011V12AM2
Package Type AlphaModuleTM
Absolute Maximum Ratings
(TA = 25°C, unless otherwise noted)
Symbol VDS VGS, MAX VGS,OP,TRANS VGS,OP
ID
IDM TVJM TVJ
Parameter
Drain-Source Voltage
Maximum
Gate-Source Voltage
Max Transient (A)
Recommended Operating (B)
Continuous Drain Cur
AOH011V12AM2 Datasheet
