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AOI280A60 - N-Channel Power Transistor

General Description

Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/

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Full PDF Text Transcription for AOI280A60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOI280A60. For precise diagrams, tables, and layout, please refer to the original PDF.

AOD280A60/AOI280A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for bet...

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S5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 56A < 0.28Ω 23.5nC 3.