Datasheet Details
| Part number | AOI7S65 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 635.19 KB |
| Description | Power Transistor |
| Datasheet |
 AOI7S65 Datasheet
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| Part number | AOI7S65 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 635.19 KB |
| Description | Power Transistor |
| Datasheet |
AOI7S65 Datasheet
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The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 750V 30A 0.65W 9.2nC 2mJ TO252 TO251 TO251A Top View Bottom View Top View Bottom View Top View IPAK Bottom View D D D S G AOD7S65 G S S GD AOU7S65 S DG S D G AOI7S65 G D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy H EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Maximum 650 ±30 7 5 30 1.7 43 86 89 0.7 100 20 -55 to 150 300 Typical 45 -1.1 Maximum 55 0.5 1.4 S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev1.0: February 2024 www.aosmd.com Page 1 of 7 AOD7S65/AOI7S65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V VDS=520V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V
AOD7S65/AOI7S65 650V 7A a MOS TM Power Transistor General.
| Part Number | Description |
|---|---|
| AOI780A70 | N-Channel Power Transistor |
| AOI7N60 | N-Channel MOSFET |
| AOI7N65 | N-Channel MOSFET |
| AOI11S60 | Power Transistor |
| AOI1N60 | 1.3A N-Channel MOSFET |
| AOI206 | 30V N-Channel MOSFET |
| AOI21357 | P-Channel MOSFET |
| AOI2210 | 200V N-Channel MOSFET |
| AOI2606 | 60V N-Channel MOSFET |
| AOI2610 | 60V N-Channel MOSFET |