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ALPHA & OMEGA
SEMICONDUCTOR
AOK150V120X2Q 1200 V αSiC Silicon Carbide Power MOSFET
Features
• Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified
Applications
• xEV Charger • Electric Vehicle Supply Equipment (EVSE) • Motor Drives • Automotive Inverters
Pin Configuration
Top View
Product Summary
VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 800 V 100% UIS Tested
1200 V 40 A 150 mΩ 87.