The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
Full PDF Text Transcription for AOK29S50 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AOK29S50. For precise diagrams, and layout, please refer to the original PDF.
AOK29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is de...
View more extracted text
n fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-247 600V 120A 0.15Ω 26.6nC 6.