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AOL1702 - N-Channel MOSFET

Description

The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Features

  • es VDS (V) = 30V ID =70A (VGS = 10V) RDS(ON) < 5.8mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View S G D Bottom tab connected to drain G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C G Current B TC=100°C Pulsed Drain Current C ID IDM Continuous Drain CurrentA Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy L=.

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AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Features VDS (V) = 30V ID =70A (VGS = 10V) RDS(ON) < 5.8mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.
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