Datasheet Details
| Part number | AON6246 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.45 KB |
| Description | 60V N-Channel MOSFET |
| Download | AON6246 Download (PDF) |
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Overview: AON6246 60V N-Channel MOSFET General.
| Part number | AON6246 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.45 KB |
| Description | 60V N-Channel MOSFET |
| Download | AON6246 Download (PDF) |
|
|
|
The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 60V 80A < 6.4mΩ < 8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 60 ±20 80 51 170 13 10 50 125 83 33 2.3 1.4 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH C TC=25° C Power Dissipation Power Dissipation B TC=100° C TA=25° C TA=70° C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1.1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 0: July 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6246 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.5 170 5.3 9.3 6.3 100 0.7 1 85 2280 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f
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