Datasheet Details
| Part number | AON6266E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 357.43 KB |
| Description | N-Channel MOSFET |
| Download |
AON6266E Download (PDF)
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| Part number | AON6266E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 357.43 KB |
| Description | N-Channel MOSFET |
| Download |
AON6266E Download (PDF)
|
|
|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • ESD Protected • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 24A < 13.2mΩ < 17.7mΩ HBM Class 2 Top View DFN5x6 Bottom View Top View D PIN1 PIN1 1 2 3 4 8 7 6 5 G S Orderable Part Number AON6266E Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy VDS Spike I Power Dissipation B L=0.3mH 10µs TC=25°C TC=100°C C IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 24 21 95 14.5 11.5 14 29 72 26 10.5 5.0 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 45 4.0 Max 25 55 4.8 Units °C/W °C/W °C/W Rev.1.0: February 2017 www.aosmd.com Page 1 of 6 AON6266E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=60V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=18A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V M
AON6266E 60V N-Channel AlphaSGT TM General.
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