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AON6946 Datasheet 30v Dual Asymmetric N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON6946 30V Dual Asymmetric N-Channel AlphaMOS General.

General Description

• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 16A <11.6mΩ <17mΩ Q2 30V 18A <7.8mΩ <11.8mΩ Top View DFN5X6B Bottom View PIN1 PIN1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.05mH C 16 ID 12 IDM 64 14 IDSM 11.5 IAS 19 EAS 9 18 14 72 18G 14 25 16 VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 7.3 2.9 13 5.2 TA=25°C Power Dissipation A TA=70°C PDSM 3.5 2.3 3.9 2.5 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 29 55 13.8 Typ Q2 26 50 7.7 Max Q1 35 66 17 Max Q2 32 60 9.5 Units °C/W °C/W °C/W Rev.1.0: September 2013 www.aosmd.com Page 1 of 10 AON6946 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=13A T

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